There has been a race of producing the best and the fastest processor in the mobile industry has never been hotter as it has been of today. Qualcomm with its latest Snapdragon iteration has taken the competition to a whole new level. The Qualcomm Snapdragon 835 has a lot more power than its predecessors the Snapdragon 820 and the Snapdragon 821.

GFXbench has spilled out the details which gives a whole picture of the octa-core processor SoC. This will have a clock speed of 2.2GHz. The processor would be made on FinFET technology. It would be made on 10nm chip. This 10nm chip is said to increase the efficiency a whole lot much. The processor is said to consume 40% less power. The performance improvement over the 14nm process is said to be 27%. If we start solving this equation into simple English, this will mean great performance improvement. The battery life will also get a huge bump, the phone will last on average 30% longer. So all that extra performance with extra juice in the palm of your hands.

The small SoC will help the manufacturers to fit in more raw power hardware to boost the overall performance like a bigger battery. We have a word on the first phones to get the Snapdragon 835, these will be the Galaxy S8 and Mi6. The results of the processor are as follows

  • 4 fps (off screen) in Manhattan
  • 1 OpenGL ES 3.1
  • 8 FPs (off screen) in Manhattan
  • OpenGL ES 3.0
  • 9 fps (off screen) in T-Tex
  • OpenGL ES 2.0

After seeing these numbers, we are convinced that Qualcomm will easily beat Appleā€™s A10 processor. Qualcomm has been a leader in Android market for quite some time now and it continues to impress us with its capabilities. If we are to judge the Qualcomm Snapdragon 835 is going to be the star processor of 2017.

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Max has been writing for tech blogs since 2008. He always had a knack for tech and pursued it professionally. After graduating from Fordham University, Max has been writing for top newspapers and blogs. If Max is not found anywhere around gadgets he would be gone hiking or surfing.